SiCPIC- Silicon Carbide Photonic Integrated Circuit

The project aims to overcome the limitations of current microelectronic circuits by exploring the unique optical properties of Silicon Carbide (SiC). This wide band-gap semiconductor is a promising material that can address the challenges of high-power consumption and signal delay in existing technologies.

A core component of this project is the training of 15 Doctoral Candidates in the field of PIC technologies. These researchers will gain a wide range of skills, from materials and device design to system-level applications, with the goal of creating a platform solution that ensures European leadership in next-generation PIC technologies. This training is crucial for implementing the EU Chips Act and ensuring a greater degree of European semiconductor autonomy.